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Origin and Enhancement of Spin Polarization Current in Diluted Magnetic Oxides by Oxygen Vacancies and Nano Grain Size

机译:稀磁场中自旋极化电流的起源与增强   氧气空位氧化物和纳米粒度

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摘要

Spin polarized current is the main ingredient of diluted magnetic oxides dueto its potential manipulation in spintronic devices. However, most research hasfocused on ferromagnetic properties rather than polarization of electriccurrent, because direct measurements were difficult and the origin of spinpolarized currents has yet to be fully understood. The method to increase thespin polarized current percentage is beyond practical consideration at thepresent status. To target this problem, we focus on the role of oxygenvacancies and nano grain size on the spin polarized current, which arecontrolled by growing the Co-doped ZnO thin-films at room temperature in areducing atmosphere [Ar + (1% ~ 30%) H2]. We found that the conductivityincreases with an increase in oxygen vacancies via two independent channels:the variable range hopping (VRH) within localized states and the itineranttransport in the conduction band. The Andreev Reflection measurements provethat the VRH conduction is equivalent to spin polarized current. Transportmeasurements show that the best way to increase the VRH content, or thepercentage of spin polarized current, is to increase oxygen vacancyconcentration and to reduce grain size and lattice constants of the films.
机译:自旋极化电流是稀释的磁性氧化物的主要成分,这是由于它在自旋电子设备中具有潜在的操纵能力。但是,大多数研究都集中在铁磁特性而不是电流极化上,因为直接测量是困难的,并且自旋极化电流的起源尚未完全了解。目前,增加自旋极化电流百分率的方法尚不实用。为了解决这个问题,我们关注氧空位和纳米晶粒尺寸对自旋极化电流的作用,这是通过在室温下于还原性气氛中生长掺Co的ZnO薄膜来控制的[Ar +(1%〜30%) H2]。我们发现电导率通过两个独立的通道随着氧空位的增加而增加:局部状态下的可变范围跳变(VRH)和导带中的巡回剂传输。 Andreev反射测量结果证明VRH传导等效于自旋极化电流。迁移测量表明,增加VRH含量或自旋极化电流百分比的最佳方法是增加氧空位浓度并减小薄膜的晶粒尺寸和晶格常数。

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